Integrable active diode
US5099302A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 20, 1990 |
| Grant date | Mar 24, 1992 |
| Priority date | — |
| Expiry date | Dec 20, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
Abstract
An active diode for protecting from reverse voltages a monolithic structure comprising a logic portion and a power portion of the vertical MOS transistor type. The logic portion is constituted by conventional MOS transistors (TL-1) placed in a well (b 64) of a first conductivity type formed in a substrate (60) of the second conductivity type, the rear surface (74) of the substrate corresponding to the drain of the vertical MOS transistor. The active diode comprises a MOS transistor (TS), the gate of which (65) is controlled by a voltage whose sign is representative of the supply voltage polarity, the drain region of which (67) is grounded, and a highly doped deep area (71) of the first conductivity type extending from the upper surface (69) of the well (64), said area being connected to the source (66) of the MOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.