Method and apparatus for forming a diamond film
US5099788A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 1990 |
| Grant date | Mar 31, 1992 |
| Priority date | — |
| Expiry date | Jul 3, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for forming a diamond film, has a casing in which vacuum is maintained at a predetermined value. A substrate is disposed within the casing so that the diamond film is formed thereon. A gas plasma generator for generating a gas plasma near the substrate from a plasma source gas and a carbon source gas by an arc discharge is provided within the casing. A detector detects a factor which is related to a change in a surface temperature of the diamond film, and an electronic controller controls in response to the detected factor the surface temperature of the diamond film so as to maintain such temperature near a predetermined optimal value for forming the diamond film. As the surface temperature is maintained near the optimal value by a feedback control, high purity diamond film is obtained irrespective of the thickness or the forming time thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.