Semiconductor laser diode arrangement and method of making same
US5100220A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 9, 1990 |
| Grant date | Mar 31, 1992 |
| Priority date | — |
| Expiry date | Oct 9, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/005
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device, formed on a wafer, comprises an array of laser diodes, each emitting a beam parallel to the wafer surface and, integrated with the array, individually tilted deflecting mirrors forming an array of virtual sources. The virtual sources are spaced more closely together than the physical separation of the laser diodes and can even be coincident, thereby reducing the apparent spacing between the beam origins. The reflected beams are substantially perpendicular to the wafer providing a "surface-emitting" device. The required deflector configuration can be fabricated using a single undirectional process, the mirror positions and orientations being determined by proper segment geometry of the etch-mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.