Silica-based anti-reflective planarizing layer
US5100503A · kind A · utility
107Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 1991 |
| Grant date | Mar 31, 1992 |
| Priority date | — |
| Expiry date | Jan 7, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is disclosed a dyed, spin-on glass composition with a high carbon content for use in providing antireflective planarizing layers on substrates such as semiconductor silicon wafers. These layers can be used as hard masks by etching patterns therein. These hard masks can be used in multilayer resists and in making lithography masks. Methods for producing these hard-masks are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.