Method of trapping ion in silicon oxide film or silicon oxy-nitride film
US5100519A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 1990 |
| Grant date | Mar 31, 1992 |
| Priority date | — |
| Expiry date | Dec 5, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of trapping ions in a silicon oxide film or a silicon oxy-nitride film, silicon or silicon nitride as an electrode is first immersed in a nonaqueous solvent containing an electrolyte. Then, a voltage is applied between the electrode and a counter electrode so as to oxidize the surface of the silicon or silicon nitride to form a silicon oxide film or a silicon oxy-nitride film. At the same time, the ions contained in the electrolyte are caused to permeate into the silicon oxide film or the silicon oxy-nitride film and trapped therein. The method is thus capable of trapping ions in a silicon oxide film or a silicon oxy-nitride film for a short time without using any evaporation apparatus and of shifting the flat band potential of the silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.