Method for producing edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure

US5100694A · kind A · utility

Assignee

• The United States of America as represented by the Administrator of the National Aeronautics and Space Administration · US

Inventors

• Brian D. Hunt · Oroville, US
• Henry G. LeDuc · Pasadena, US

Key dates

• Filing date: Jan 18, 1991
• Grant date: Mar 31, 1992
• Expiry date: Jan 18, 2011

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N60/0912

Abstract

Disclosed is a method for fabricating an edge geometry superconducting tunnel junction device comprising two niobium nitride superconducting electrodes (14,28) and a magnesium oxide tunnel barrier (24) sandwiched between the two electrodes. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250.degree. to 500.degree. C. for improved quality of the electrode.