Radiation-sensitive polymer and radiation-sensitive composition containing the same
US5100762A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1990 |
| Grant date | Mar 31, 1992 |
| Priority date | — |
| Expiry date | Jul 9, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0042
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A radiation-sensitive polymer is capable of resistance to the dry etching when it is applied to form very fine patterns in VLSIs and other semiconductor devices, wherein the polymer is a radiation-sensitive polymer that contains at least one unit represented by the general formula (I): ##STR1## (where X is an alkyl group, a halogen atom or a halogenated alkyl group; R.sup.1 is an alkyl group, an alkoxy or an aryl group; R.sup.2 is carbon monoxide; M is Si, Ge, Sn, Ti, Mo or W; k is a number defined by the valence of (M minus 1); and l is zero or a positive integer), and which optionally contains at least one unit represented by the general formula (II): ##STR2## (where Y is an alkyl group, a halogen atom or a halogenated alkyl group; R.sup.3 is an alkyl group or an aryl group) and/or at least one unit represented by the general formula (III): EQU --SO.sub.2 --R.sup.4 (III) (where R.sup.4 is a divalent alkyl or aryl group).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.