Photo sensor with monolithic differential amplifier
US5101253A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 1991 |
| Grant date | Mar 31, 1992 |
| Priority date | — |
| Expiry date | Jun 11, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/103
Abstract
There is a photosensor in which a photoelectric converter having a P-N junction and an amplifying section having a bipolar transistor to amplify an output of this converter are integrally formed in a semiconductor substrate. The input stage of the amplifying section has an insulating gate type transistor, and the output of the photoelectric converter is inputted to the gate electrode of this transistor. The photosensing surface of the photoelectric converter is covered by a transparent protection film, and a thickness of this film is determined so as to make the reflection factor of the incident light at the photosensing surface of the photoelectric converter zero. In the manufacturing of this photosensor, the base region of the bipolar transistor and one region of the P-N junction of the photoelectric converter of the same conductivity type as the base region are simultaneously formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.