Amorphous photoelectric conversion device with avalanche
US5101255A · kind A · utility
24Cited by
7References
20Claims
0Family size
Inventors
Key dates
| Filing date | Jul 24, 1989 |
| Grant date | Mar 31, 1992 |
| Priority date | — |
| Expiry date | Jul 24, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/15
Abstract
Disclosed is a photoelectric conversion device which comprises: a photoconductive layer made of amorphous semiconductor material which shows charge multiplication and which converts photo signals into electric signals; and a substrate having electric circuits or the like (for example switching elements) for reading the electric signals. The amorphous semiconductor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.