Semiconductor pressure pulse wave sensor
US5101829A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 1990 |
| Grant date | Apr 7, 1992 |
| Priority date | — |
| Expiry date | Dec 19, 2010 |
Classification
- Technology area (CPC A)Human Necessities
- CPC primaryA61B2562/043
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor sensor for detecting a pressure pulse wave produced from an arterial vessel of a subject, including a semiconductor substrate including a thin portion obtained by locally forming a recess in one of opposite surfaces of the semiconductor substrate, at least one semiconductor pressure sensing element supported by the thin portion of the semiconductor substrate, for converting a pressure pulse wave transmitted from the arterial vessel to the thin portion, into an electric signal, and at least one semiconductor active element supported by the semiconductor substrate, for converting the electric signal into a different electric signal, the at least one active element including a portion of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.