Wet-tip die for EFG cyrstal growth apparatus
US5102494A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 1991 |
| Grant date | Apr 7, 1992 |
| Priority date | — |
| Expiry date | Mar 15, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/104
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A novel capillary die and crystal growing method are provided for growing a hollow crystalline body by EFG. Inner and outer annular moats surround the die tip. Passageways are provided for supplying melt to those moats from a crucible, so that melt in said moats will wet and cover the inner and outer exterior surfaces of the die tip during growth of a hollow crystalline body. The novel die may be constructed so as to have a lower die tip and a shorter capillary than EFG dies heretofore used to successfully grow hollow bodies. The die design facilitates keeping the temperature of the die tip substantially uniform about its circumference, thereby improving the uniformity of thickness of the wall of the crystalline body grown from a film of melt on the die tip. The moats reduce the likelihood of the growth process being interrupted or adversely affected by flooding of the die. In the event the growth meniscus breaks, liquid silicon is captured in the moats, thereby preventing or reducing the likelihood of flooding of the die and associated growth apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.