Patent · US Expired

Method of depositing microcrystalline solid particles from the gas phase by means of chemical vapor deposition

US5102689A · kind A · utility

5Cited by

1References

14Claims

0Family size

Assignee

U.S. Philips Corporation · US

Inventors

Peter Klaus Bachmann · Würselen, DE
Hans Lydtin · Stolberg, DE
Jacques Warnier · Eijsden, NL

Key dates

Filing date	Aug 17, 1990
Grant date	Apr 7, 1992
Priority date	—
Expiry date	Aug 17, 2010

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC23C16/45568
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Method of depositing microcrystalline solid bodies from the gas phase by means of Chemical Vapor Deposition (CVD) in which the solid particles are deposited on a substrate heated to a temperature ranging between 450.degree. and 1200.degree. C. at a pressure ranging between 10.sup.-5 and 1 bar and at a directed gas flow, in which method the reactant gas is passed through a porous intermediate body having a thickness of between 2 and 30 mm of a material suitable for use at temperatures up to 2500.degree. C., which intermediate body is present in the zone having the maximum energy content within the reactor, while the reactant gas is excited in said intermediate body, whereafter the solid particles are deposited on the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.