Semiconductor device with interfacial electrode layer
US5103268A · kind A · utility
22Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 1991 |
| Grant date | Apr 7, 1992 |
| Priority date | — |
| Expiry date | Jul 8, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S136/29
Abstract
A semiconductor device having a thin film silicon-containing active layer and a metallic first electrode is provided with an interfacial metallic layer at an inner surface of a second electrode to increase electrical resistance and thereby reduce shunts adjacent pinhole-type defects of the active layer. The interfacial layer is preferably made of a metal selected from the group consisting of tin, gold, titanium, palladium and tantalum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.