Monolithically integrated semiconductor optical preamplifier
US5103455A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 1990 |
| Grant date | Apr 7, 1992 |
| Priority date | — |
| Expiry date | May 9, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/5045
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical preamplifier includes a semiconductor optical amplifier monolithically integrated with an optical detector and electrically isolated from the detector by an isolation region. The isolation region consists of a low-loss, preferably transparent, insulating material whose index of refraction is matched to at least the refractive index of the amplifier, leading to reduced facet reflectivity at the amplifier output facet. Alternative device structures may include a waveguiding layer in the isolation region, a grating integrated with or following the optical amplifier, and a tuning region positioned between the amplifier and isolation region for filtering spontaneous emission.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.