Method for fabricating laser generated I.C. masks
US5104481A · kind A · utility
7Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1990 |
| Grant date | Apr 14, 1992 |
| Priority date | — |
| Expiry date | Nov 15, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/76
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An improved method of making masks includes forming a layer of amorphous silicon of about 2,000 angstroms on a transparent substrate. A laser beam is directed through the transparent substrate traverses the amorphous silicon to form a pattern of crystallized silicon. The n-crystallized silicon is etched leaving a patterned substrate. The patterned substrate is used as a mask for exposing photoresist on semiconductor elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.