Low distortion, low noise, amplifier
US5105165A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 17, 1990 |
| Grant date | Apr 14, 1992 |
| Priority date | — |
| Expiry date | Dec 17, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/372
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A bipolar or field-effect transistor amplifier with very large dynamic range for use as a preamplifier in a radio receiver, optical link reciver, or the like. The amount of gain is approximately an integral number. Diode-connected transistors in the collector load circuitry of a gain-providing transistor cancel the distortion from the non-linear effects of the emitter-base junction of the gain-providing transistor at high input signal levels. The number of diodes corresponds to the amount of gain desired. To reduce the noise generated by the amplifier, the emitter of the gain-providing transistor has an inductor in series therewith and the collector load circuitry has an inductor therein, the ratio of the inductances substantially determining the gain of the amplifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.