MOCVD method and apparatus
US5106453A · kind A · utility
38Cited by
10References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 29, 1990 |
| Grant date | Apr 21, 1992 |
| Priority date | — |
| Expiry date | Jan 29, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In an MOCVD reactor, gases are channeled around the periphery of a baffle plate (15) so as to flow radially inwardly along a slotted injection plate (16). The slots (22) in the injection plate extend radially and are of non-uniform width so as to compensate for a non-uniform rate of deposition. The resultant flow over a rotating heated substrate (17) gives a more uniform deposit of epitaxially grown material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.