Reactive ion etch process for surface acoustic wave (SAW) device fabrication
US5106471A · kind A · utility
6Cited by
13References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1990 |
| Grant date | Apr 21, 1992 |
| Priority date | — |
| Expiry date | Apr 2, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H3/08
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A dry etch process allows fabrication of very small SAW electrodes (less than 1 micron wide) on LiNbO.sub.3 (lithium niobate) or quartz substrates. In the process, analuminum (Al) layer is disposed on the substrate, and a photoresist layer is applied and exposed in the appropriate pattern. The wafer is then placed in an RIE where the Al is dry etched using a plasma containing chlorine and fluorine. The photoresist is then removed by an oxygen plasma. The oxygen also operates to replace the chlorine ions. By using this process, very precisely shaped electrodes can be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.