Electrophotographic sensitive member
US5106711A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Apr 12, 1989 |
| Grant date | Apr 21, 1992 |
| Priority date | — |
| Expiry date | Apr 12, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08242
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to an electrophotographic sensitive member comprising a photoconductive amorphous silicon carbide layer. An amorphous silicon layer has superior abrasion resistance, heat resistance, antipollution property, photosensitive characteristic and the like. However, an amorphous silicon layer itself has a low dark resistance, so that dopants, such as boron, are added thereto but a dark resistance of 10.sup.12 .OMEGA..multidot.cm or more required for the case where it is used as an electrophotographic sensitive member has never been obtained. The present inventors have found before that an amorphous silicon carbide layer has a large carrier-mobility and photoconductivity and its dark resistance of 10.sup.13 .OMEGA..multidot.cm or more can be easily obtained regardless of the existence of dopants and furthermore an electrophotographic sensitive member, which can be positively and negatively charged by the selection of the dopants, can be obtained. The present invention provides an electrophotographic sensitive member capable of improving the photosensitive characteristics and the like to improve electrophotographic characteristics, as desired, with an a-SiC lay…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.