Vertical transistor device fabricated with semiconductor regrowth
US5106778A · kind A · utility
80Cited by
8References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 16, 1990 |
| Grant date | Apr 21, 1992 |
| Priority date | — |
| Expiry date | Feb 16, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/142
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical transistor device is characterized by active regions vertically separated by a narrower control region. The control region is defined by conducting layer extensions which extend into a groove within which semiconductor material is regrown during device fabrication. The device is further characterized by regions of isolating material, located horizontally adjacent to the active regions, said isolating material serving to reduce parasitic capacitance and improve thermal distribution within the device, thereby improving frequency and power performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.