Thin coatings for use in semiconductor integrated circuits and processes as antireflection coatings consisting of tungsten silicide
US5106786A · kind A · utility
28Cited by
3References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 1989 |
| Grant date | Apr 21, 1992 |
| Priority date | — |
| Expiry date | Oct 23, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/952
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An antireflection coating (21) for use in integrated circuit processing consists of a film of tungsten silicide (WSi.sub.0.45) or tungsten silicon nitride (WSiN). These coatings are preferably made by sputtering, with the tungsten silicon nitride coating being made by sputtering in a nitrogen-containing atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.