Process for forming thin oxide film
US5106821A · kind A · utility
3Cited by
1References
13Claims
0Family size
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Key dates
| Filing date | Sep 10, 1990 |
| Grant date | Apr 21, 1992 |
| Priority date | — |
| Expiry date | Sep 10, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/731
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process for forming a thin oxide film on an underlying surface adapted for film formation thereon according to a radio frequency magnetron sputtering method using an oxide target(s). The excitation frequency is higher than 13.56 MHz and provides a lower negative target self-bias voltage permitting improved film formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.