Control component for a three-electrode device
US5107152A · kind A · utility
37Cited by
12References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 8, 1989 |
| Grant date | Apr 21, 1992 |
| Priority date | — |
| Expiry date | Sep 8, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/162
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A gate biasing circuit including a Schottky barrier diode in series with an ion implanted resistor for use with a baseband MMIC control components such as an MESFET. The diode gate biasing scheme improves the low frequency distortion characteristics of GaAs MESFET control components significantly, allowing microwave power handling and distortion characteristics to be maintained below 100 Hz.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.