Ion source having auxillary ion chamber
US5107170A · kind A · utility
401Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 17, 1989 |
| Grant date | Apr 21, 1992 |
| Priority date | — |
| Expiry date | Oct 17, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0825
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion source having an auxiliary plasma chamber and a main plasma chamber. The auxiliary plasma chamber receives an ionizable gas and is provided with microwaves with sufficient power to create a high frequency discharge and generate a subplasma for sustaining the creation of an ion plasma in the main chamber. Multiple auxiliary plasma chambers may be used and each may be separately regulated. Protective plates, screens, and coatings may be provided to protect the ion plasma of the main chamber from sputtering a facing wall of the auxiliary plasma chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.