Cleaning of CVD reactor used in the production of polycrystalline silicon by impacting with carbon dioxide pellets
US5108512A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1991 |
| Grant date | Apr 28, 1992 |
| Priority date | — |
| Expiry date | Sep 16, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B33/035
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
The present invention is a process for the cleaning of the inner surfaces of a chemical vapor deposition reactor used in the production of polycrystalline silicon. The process comprises impacting the surfaces to be cleaned with solid carbon dioxide pellets. The carbon dioxide pellets dislodge silicon deposits from the surface of the reactor without damaging the surface of the reactor and without providing a source for contamination of polycrystalline silicon produced in the cleaned reactor. The present process is particularly useful for the cleaning of the inner surfaces of chemical vapor deposition reactors used in the production of semi-conductor grade silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.