Dry etching apparatus
US5108535A · kind A · utility
59Cited by
0References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 15, 1990 |
| Grant date | Apr 28, 1992 |
| Priority date | — |
| Expiry date | Jun 15, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A dry etching apparatus includes a discharge room in which a gas plasma is created by a discharge, an ejection nozzle for ejecting the plasma gas, a first vacuum room into which the plasma gas is introduced through the ejecting nozzle by supersonic expansion of the plasma gas, and a second vacuum room including a skimmer for extracting a supersonic molecular flow, the supersonic molecular flow of the plasma gas taken into the second vacuum room being blown against the material to be etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.