High frequency semiconductor device
US5109270A · kind A · utility
8Cited by
13References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 1991 |
| Grant date | Apr 28, 1992 |
| Priority date | — |
| Expiry date | Jul 8, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high frequency semiconductor device comprising metal electrode leads formed on one surface of a flexible film, a plurality of bumps formed on selected portions of the electrode patterns, a recessed portion formed on the flexible film within a region bounded by the plurality of bumps and a plurality of electrode pads of a high frequency semiconductor element respectively bonded to the bumps in alignment with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.