Surface fabricating device
US5110407A · kind A · utility
456Cited by
3References
51Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 20, 1991 |
| Grant date | May 5, 1992 |
| Priority date | — |
| Expiry date | Feb 20, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Anisotropic etching can be obtained in the direction of the incident heated beam of reactive gas with the introduction of a second material for controlling reactivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.