Semiconductor device and method of making the same
US5110750A · kind A · utility
4Cited by
2References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 2, 1990 |
| Grant date | May 5, 1992 |
| Priority date | — |
| Expiry date | Aug 2, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/351
Abstract
For compensating a decreased impurity concentration at a peripheral portion of a well region provided in a semiconductor substrate, an impurity whose conductivity type is same as that of the well region is diffused into the peripheral portion thereof to form a diffused region thereon. Therefore, the well region having the approximately uniform surface impurity concentration is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.