Method and apparatus for the detection of leakage current
US5111137A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1990 |
| Grant date | May 5, 1992 |
| Priority date | — |
| Expiry date | Oct 29, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/54
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus for analyzing a semiconductor device having a diode formed therein. In its broadest sense, the invention involves irradiating the semiconductor device with electromagnetic radiation while monitoring the leakage current output from the diode contained in the semiconductor device. If the semiconductor device is present and properly soldered to the printed circuit board, an increase in the leakage current will be observed during the irradiation process. The increase in leakage current is also representative of the presence of intact bond wires at both the pin under test and the ground pin. The invention in a preferred form is shown to include a voltage source, electrically connected to the diode, for biasing the diode in a reverse direction, a current monitor, connected to monitor the leakage current from the diode and an electromagnetic radiation generator, positioned to provide electromagnetic radiation incident on the semiconductor device. It is preferred that the electromagnetic radiation be an ionizing radiation such as X-rays. However, such electromagnetic radiation can also be visible light, such as fluorescent light or incandescent light. In an especiall…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.