Method of fibricating a semiconductor device having a trench
US5112771A · kind A · utility
60Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 12, 1989 |
| Grant date | May 12, 1992 |
| Priority date | — |
| Expiry date | Jun 12, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/665
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a trench (30) comprises a semiconductor substrate (11), a plurality of elements (13) provided on the semiconductor substrate, a trench (30) provided between the elements and an insulating material (12) embedded in the trench for isolating the elements. The trench has its bottom portion region enlarged in both sides. The semiconductor device is manufactured by enlarging the bottom portion region of the trench by etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.