Method of fabricating a trench structure
US5112772A · kind A · utility
27Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1991 |
| Grant date | May 12, 1992 |
| Priority date | — |
| Expiry date | Sep 27, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/763
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a trench structure includes providing a substrate having a first layer disposed on a surface thereof and a second layer disposed on the first layer. A trench is formed through the first and second layers and into the substrate. A dielectric liner is formed on the sidewalls of the trench which is then filled with a trench fill material. Portions of the trench liner disposed above the trench fill material are removed and a conformal layer is then formed on the trench structure. The conformal layer and a portion of the trench fill material are then oxidized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.