Step-cut insulated gate static induction transistors and method of manufacturing the same
US5115287A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1991 |
| Grant date | May 19, 1992 |
| Priority date | — |
| Expiry date | Aug 30, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A step-cut insulated gate static induction transistor can accurately make a channel length and a gate length and is excellent as a high speed transistor but is greatly affected by a deviation in mask alignment in the manufacturing process. This invention utilizes the fact that a gate portion formed in a previous processes is used as a mask in a post portion to thereby self-adjustably form the post portion, thus eliminating the influence of the deviation in mask alignment. In addition, a construction has been invented in which a current flowing through a portion apart from a gate between a drain and a source can be restricted. The aforesaid manufacturing method is also used for this improved construction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.