Vertical cavity surface emmitting lasers with transparent electrodes
US5115441A · kind A · utility
81Cited by
4References
19Claims
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Key dates
| Filing date | Jan 3, 1991 |
| Grant date | May 19, 1992 |
| Priority date | — |
| Expiry date | Jan 3, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Optically transparent and electrically conductive cadmium tin oxide or indium tin oxide is employed in vertical cavity surface emitting lasers for vertical current injection. Continuous wave lasing at room temperature is achieved in GaAs/AlGaAs quantum well lasers. Devices with a 10 .mu.m optical window which also serves as a vertical current injection inlet give lasing threshold currents as low as 3.8 mA. The differential series resistance is (350-450) .OMEGA. with a diode voltage of (5.1-5.6) V at the lasing threshold. Far field pattern of the laser emission is Gaussian-like with a full width at half maximum of 7.degree..
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.