Top-emitting surface emitting laser structures
US5115442A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 1990 |
| Grant date | May 19, 1992 |
| Priority date | — |
| Expiry date | Apr 13, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2063
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Top surface emitting, vertical cavity, surface emitting lasers depend upon emission through apertured top surface electrodes. Biasing current, accordingly peripheral to the laser as introduced, follows a path which comes to confluence within the active gain region to effectively attain lasing threshold. The path is consequence of a buried region of increased resistance which encircles the laser at or above the active region. The buried region is produced by ion implantation-induced damage with ion energy magnitude and spectrum chosen to produce an appropriate resistance gradient. Integrated, as well as discrete, lasers are contemplated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.