Cesium hydroxide etch of a semiconductor crystal
US5116464A · kind A · utility
4Cited by
6References
41Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1990 |
| Grant date | May 26, 1992 |
| Priority date | — |
| Expiry date | Dec 7, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30608
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An aqueous solution of cesium hydroxide serves as a highly selective anisotropic etch for semiconductor crystals including silicon. The cesium hydroxide also has a high etch selectivity for tantalum with respect to semiconductor crystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.