Thermionic emission type static induction transistor and its integrated circuit
US5117268A · kind A · utility
4Cited by
6References
11Claims
0Family size
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Key dates
| Filing date | Jan 24, 1990 |
| Grant date | May 26, 1992 |
| Priority date | — |
| Expiry date | Jan 24, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/05
Abstract
In a static induction transistor of thermionic emission type, its gate region is formed of a semiconductor having a forbidden band gap larger than that of a semiconductor forming its channel region, and the distance between a source region and the intrinsic gate region is selected to be smaller than the mean free path of carriers so as to permit the thermionic emission. Such a vertical structure transistor is also applied to an integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.