Photo-detecting semiconductor device with passivation suppressing multi-reflections
US5119156A · kind A · utility
37Cited by
3References
4Claims
0Family size
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Key dates
| Filing date | Sep 1, 1988 |
| Grant date | Jun 2, 1992 |
| Priority date | — |
| Expiry date | Sep 1, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/805
Abstract
A photo-detecting element is covered with a passivation film having an uneven surface to avoid multi-reflection for the monochromatic incident light. The uneven film transmits the same intensity of incident light even if the mean thickness of uneven film is not constant over the entire surface of a semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.