Semiconductor device
US5119163A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 1991 |
| Grant date | Jun 2, 1992 |
| Priority date | — |
| Expiry date | Jun 18, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes memory cells each of which include a plurality of groups of an anti-fuse and a transistor connected in series; a capacitor including first and second electrodes, with the first electrode connected to a bit line of the memory cell; a first switch connected between the bit line and a power source; a second switch connected between the power source and the second electrode of the capacitor; and a third switch connected between the second electrode of the capacitor and a ground. A specific memory cell is selected out of the memory cells, and a superposed supply voltage is applied through the capacitor to the anti-fuse of the specific memory by turning on and/or off the first through third switches, so that a storage of information in the memory cell can be performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.