Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays
US5119388A · kind A · utility
4Cited by
8References
10Claims
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Key dates
| Filing date | Nov 21, 1990 |
| Grant date | Jun 2, 1992 |
| Priority date | — |
| Expiry date | Nov 21, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/914
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A PbTe/PbEuSeTe buried quantum well diode laser and array and the method for making the same. The quantum well active region layer is buried between electrical and optical confinement regions which have an energy band gap greater than the active buried layer and an index of refraction less than the active layer. The buried structure enhances electrical and optical confinement, reduces threshold currents, and provides a stable single mode laser. The buried laser and array are produced using a two-step molecular beam epitaxy method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.