Semiconductor laser device capable of controlling wavelength shift
US5119393A · kind A · utility
52Cited by
8References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 13, 1990 |
| Grant date | Jun 2, 1992 |
| Priority date | — |
| Expiry date | Jun 13, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3434
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A wavelength-tunable semiconductor laser device presenting a large wavelength-tunable range or a very-high-speed modulating semiconductor laser device having a distributed feedback structure including a diffraction grating as in the case of a DBR laser or a DFB laser incorporates therein a plurality of active layers differing from one another in constituent elements or composition ratio or thickness for reducing spectral line widths, while improving single-mode spectral oscillation characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.