Proximity effect very long wavlength infrared (VLWIR) radiation detector
US5121173A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 10, 1989 |
| Grant date | Jun 9, 1992 |
| Priority date | — |
| Expiry date | Jul 10, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/702
Abstract
A VLWIR proximity effect detector 10 includes a substrate 12, a bulk superconducting material 14, a proximity layer 16 which overlies a portion of the bulk superconducting material 14, an insulator layer 17 and a transparent tunnelling electrode 18. Detector electrical contacts 19 are provided on the proximity layer 16 and on the electrode 18. VLWIR, indicated by the arrows, is absorbed in proximity layer 16 and causes a detectable modulation of tunnelling characteristics (current or voltage) between the proximity layer 16 and the electrode 18. The proximity layer has a thickness on the order of a coherence length for the material which comprises the proximity layer. In accordance with the invention it has been determined that a spatially varying energy gap (E.sub.gap) induced in the proximity layer by the adjacent superconducting material results in the proximity layer having a longer cut off wavelength than that of the adjacent bulk superconducting material. The lower value of the induced E.sub.gap within the proximity layer results in Cooper pair breaking with photons of lower energy, or longer wavelength, than is possible in the bulk superconducting material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.