Monolithic semiconductor IC device including blocks having different functions with different breakdown voltages
US5121185A · kind A · utility
15Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 1988 |
| Grant date | Jun 9, 1992 |
| Priority date | — |
| Expiry date | Oct 5, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
Abstract
A monolithic semiconductor integrated circuit device includes bipolar transistors and MOS transistors constituting plural blocks formed in a single semiconductor substrate and capable of performing different functions. The bipolar transistors in the blocks have different breakdown voltages and different operation speeds due to the selection of different resistances of their collector regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.