Method for producing highly conductive and transparent films of tin and fluorine doped indium oxide by APCVD
US5122391A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 13, 1991 |
| Grant date | Jun 16, 1992 |
| Priority date | — |
| Expiry date | Mar 13, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/152
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An atmospheric pressure chemical vapor deposition (APCVD) system for doping indium-oxide films with both tin and fluorine to produce dual electron donors in a non-batch process. The APCVD system has a conveyor belt and drive system for continuous processing through one or more reaction chambers separated by nitrogen purge curtains. A substrate passing through the system enters a muffle heated by several heaters and the reaction chambers are supplied by a source chemical delivery system comprising an oxidizer source, a fluorine chemical source, a nitrogen source, rotometers for the above sources, a mass flow controller, a tin chemical bubbler, heated lines, an indium chemical bubbler, a pair of water baths with heaters, and associated valving.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.