Thin film formation apparatus
US5122431A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 1989 |
| Grant date | Jun 16, 1992 |
| Priority date | — |
| Expiry date | Sep 11, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A hydrogenated amorphous silicon carbide material is used as the surface protecting layer for a photosensitive member of an electrophotographic apparatus. The carbon content (x) of the hydrogenated amorphous silicon carbide material, expressed by the general formula a--Si.sub.1-x C.sub.x :H, ranges from 0.4 to 0.6, and the composition is such that the ratio of the peak TO amplitude appearing in the vicinity of 480 cm.sup.-1 to the peak TA amplitude appearing in the vicinity of 150 cm.sup.-1, both as observed by laser Raman spectroscope measurement using an excitation laser of Ar.sup.+ 488nm, is 2.0 or higher. Such material does not exhibit blurring of the image even when exposed to high humidity conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.