Compact, integrated electron beam imaging system
US5122663A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1991 |
| Grant date | Jun 16, 1992 |
| Priority date | — |
| Expiry date | Jul 24, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24592
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron beam imaging system is described wherein a sharp-tip electron source is biased to produce an electron flow and a conductive target is placed in the path of the electron flow. A planar, electrostatic lens is positioned in the electron flow path and between the electron source and target. The lens includes an aperture; at least a first conductive plane that is biased less negative than the electron source; and one or more conductive planes separated by dielectric layers. A secondary electron detector is formed on the surface of the electrostatic lens that is closest to the conductive target, whereby the lens may be positioned close to the target and still not obstruct secondary electrons emitted from the target from impinging on the secondary electron detector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.