Wideband schottky focal plane array
US5122669A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 1991 |
| Grant date | Jun 16, 1992 |
| Priority date | — |
| Expiry date | Mar 13, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
Abstract
A radiation detector includes a silicon substrate (12) having opposing first and second major surfaces, the substrate absorbing visible radiation incident upon the first major surface and passing into the substrate for generating charge carriers therefrom. The detector further includes a silicide layer (16) overlying the second major surface of the substrate, the silicide layer forming a Schottky-barrier junction with the underlying substrate. The silicide layer absorbs IR radiation for generating charge carriers therefrom. The substrate has a resistivity of approximately one thousand ohms per centimeter or greater for enhancing responsivity to visible radiation. A cavity structure (16) overlies the silicide layer and has a reflector (18) optically coupled thereto for reflecting IR radiation that passes through the silicide layer back to the silicide layer. To further enhance responsivity the substrate is thinned and has a thickness within a range of approximately 25 microns to approximately 125 microns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.