Active matrix liquid crystal display using mim diodes having symmetrical voltage-current characteristics as switching elements
US5122889A · kind A · utility
32Cited by
10References
32Claims
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Key dates
| Filing date | Dec 22, 1989 |
| Grant date | Jun 16, 1992 |
| Priority date | — |
| Expiry date | Dec 22, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In thin film two terminal element type active matrix liquid crystal displays obtained by holding liquid crystal between a substrate on which is formed a transparent electrode and a substrate on which is formed in matrix form thin film two terminal elements having a metal-insulator-metal structure using a silicon nitride film as the insulator, the active matrix liquid crystal display characterized in that an impurity-doped silicon nitride layer or a silicon carbide layer is inserted between the metal and the insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.