Thin-film capacitors and process for manufacturing the same
US5122923A · kind A · utility
131Cited by
3References
18Claims
0Family size
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Key dates
| Filing date | Aug 30, 1990 |
| Grant date | Jun 16, 1992 |
| Priority date | — |
| Expiry date | Aug 30, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
Abstract
A thin-film capacitor comprises a substrate, a first electrode, of polycrystalline silicon, a second electrode, a dielectric, and a third electrode such as aluminum in the structure stacked in sequence from bottom to top. The second electrode directly on which the dielectric layer is formed is made from a member selected from the group consisting of ruthenium, ruthenium oxide, ruthenium silicide, rhenium, rhenium oxide, rhemium silicide, osmium, osmium oxide, osmium silicide, rhodium, rhodium oxide, rhodium silicide, iridium, iridium oxide and iridium silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.