Single crystal silicon substrate
US5123975A · kind A · utility
4Cited by
4References
5Claims
0Family size
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Inventors
Key dates
| Filing date | Mar 14, 1990 |
| Grant date | Jun 23, 1992 |
| Priority date | — |
| Expiry date | Mar 14, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/967
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A single crystal silicon substrate which comprises an electric insulation member and a single crystal silicon film formed on the insulation member. The silicon film has first regions and second regions. Each of the first regions is formed as a strip shape and has a high density of inorganic impurities implanted thereinto. Each of the second regions is formed as a strip shape and has a low density of the impurities. The first and second regions are alternatively arranged contacting with each other so that the first regions are separated from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.